Senior Process Engineer - SiC crystal growth by PVT (APM / NSTIC - GaN), IME

Requirements

• Job Description We are seeking a talented and passionate Senior Process Engineer to join our silicon carbide (SiC) crystal growth team.
• The successful candidate will be responsible for developing crystal growth technologies, operating crystal growth tools, and supporting the production of semi-insulating SiC wafers used as substrates for RF and millimeter-wave GaN devices.
• This position is within the National Semiconductor Translation and Innovation Centre Gallium Nitride (NSTIC - GaN) program.
• Responsibilities: Develop and optimize crystal growth technologies for semi-insulating silicon carbide (SiC) wafers used as substrates for RF and millimeter-wave GaN devices.
• Design, execute, and analyze SiC crystal growth experiments using Physical Vapor Transport (PVT) and related growth techniques.
• Characterize SiC crystals and wafers, including resistivity, defect density, crystal quality, and uniformity.
• Collaborate closely with device, epitaxy, and integration teams to ensure material performance meets device requirements.
• Troubleshoot processes and equipment to maintain tool performance and process quality.